diff --git a/klayout/drc/rule_decks/lres.drc b/klayout/drc/rule_decks/lres.drc index 909386fa..552b4f59 100644 --- a/klayout/drc/rule_decks/lres.drc +++ b/klayout/drc/rule_decks/lres.drc @@ -38,7 +38,7 @@ if FEOL # Rule LRES.3: Minimum space from Poly2 resistor to COMP is 0.6um. logger.info('Executing rule LRES.3') - lres3_l1 = lres_poly.separation(comp, 0.6.um, euclidian).polygons(0.001.um).or(comp.not_outside(lres_poly)) + lres3_l1 = lres_poly.separation(comp, 0.6.um, euclidian).polygons(1.dbu).or(comp.not_outside(lres_poly)) lres3_l1.output('LRES.3', 'LRES.3 : Minimum space from Poly2 resistor to COMP: 0.6.um') lres3_l1.forget @@ -50,7 +50,7 @@ if FEOL # Rule LRES.5: Minimum Nplus implant overlap of Poly2 resistor is 0.3µm. logger.info('Executing rule LRES.5') - lres5_l1 = lres_poly.enclosed(nplus, 0.3.um, euclidian).polygons(0.001.um) + lres5_l1 = lres_poly.enclosed(nplus, 0.3.um, euclidian).polygons(1.dbu) lres5_l2 = lres_poly.not_outside(nplus).not(nplus) lres5_l = lres5_l1.or(lres5_l2) lres5_l.output('LRES.5', 'LRES.5 : Minimum Nplus implant overlap of Poly2 resistor: 0.3µm') @@ -67,7 +67,7 @@ if FEOL # Rule LRES.7: Minimum space from salicide block to contact on Poly2 resistor is 0.22.um. logger.info('Executing rule LRES.7') cont_lres7 = contact.and(lres_poly) - lres7_l1 = cont_lres7.separation(sab, 0.22.um).polygons(0.001.um) + lres7_l1 = cont_lres7.separation(sab, 0.22.um).polygons(1.dbu) lres7_l2 = cont_lres7.interacting(sab) lres7_l = lres7_l1.or(lres7_l2) lres7_l.output('LRES.7', 'LRES.7 : Minimum space from salicide block to contact on Poly2 resistor: 0.22.um') @@ -96,7 +96,7 @@ if FEOL ## and both side (X and Y) are greater than 80um. ## then the minimum spacing to adjacent RES_MK layer is 20µm. logger.info('Executing rule LRES.9b') - lres9b = res_mk.with_area(15_000.001.um, nil).edges.with_length(80.001.um, nil) + lres9b = res_mk.with_area(15_000.um + 1.dbu, nil).edges.with_length(80.um + 1.dbu, nil) lres9b_l1 = lres9b.separation(res_mk.edges, 20.um) lres9b_l1.output('LRES.9b', 'LRES.9b : If the size of single RES_MK mark layer is greater than 15000um2